Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Guo Shao-Ling, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Chu Jun-Hao. Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbandsJ. Acta Physica Sinica, 2008, 57(6): 3818-3822. DOI: 10.7498/aps.57.3818
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Citation:
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Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Guo Shao-Ling, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Chu Jun-Hao. Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbandsJ. Acta Physica Sinica, 2008, 57(6): 3818-3822. DOI: 10.7498/aps.57.3818
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Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Guo Shao-Ling, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Chu Jun-Hao. Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbandsJ. Acta Physica Sinica, 2008, 57(6): 3818-3822. DOI: 10.7498/aps.57.3818
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Citation:
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Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Guo Shao-Ling, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Chu Jun-Hao. Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbandsJ. Acta Physica Sinica, 2008, 57(6): 3818-3822. DOI: 10.7498/aps.57.3818
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