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中国物理学会期刊
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Liu Xiu-Xi, Wang Gong-Tang. Fabrication of high voltage thyristor based on silicon organic compounds and metal oxides type isolation protective materialJ. Acta Physica Sinica, 2008, 57(1): 576-580. DOI: 10.7498/aps.57.576
Citation: Liu Xiu-Xi, Wang Gong-Tang. Fabrication of high voltage thyristor based on silicon organic compounds and metal oxides type isolation protective materialJ. Acta Physica Sinica, 2008, 57(1): 576-580. DOI: 10.7498/aps.57.576
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Fabrication of high voltage thyristor based on silicon organic compounds and metal oxides type isolation protective material

Acta Phys. Sin., 2008, 57(1): 576-580.
DOI: 10.7498/aps.57.576
CSTR: 32037.14.aps.57.576
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