Fabrication and I-V characteristics of ZnO nanowire-based field effect transistors

Zhang Wei; Li Meng-Ke; Wei Qiang; Cao Lu; Yang Zhi; Qiao Shuang-Shuang

doi:10.7498/aps.57.5887

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Zhang Wei, Li Meng-Ke, Wei Qiang, Cao Lu, Yang Zhi, Qiao Shuang-Shuang. Fabrication and I-V characteristics of ZnO nanowire-based field effect transistorsJ. Acta Physica Sinica, 2008, 57(9): 5887-5892. DOI: 10.7498/aps.57.5887

Citation:

Zhang Wei, Li Meng-Ke, Wei Qiang, Cao Lu, Yang Zhi, Qiao Shuang-Shuang. Fabrication and I-V characteristics of ZnO nanowire-based field effect transistorsJ. Acta Physica Sinica, 2008, 57(9): 5887-5892. DOI: 10.7498/aps.57.5887

Citation:

Zhang Wei, Li Meng-Ke, Wei Qiang, Cao Lu, Yang Zhi, Qiao Shuang-Shuang. Fabrication and I-V characteristics of ZnO nanowire-based field effect transistorsJ. Acta Physica Sinica, 2008, 57(9): 5887-5892. DOI: 10.7498/aps.57.5887