Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxy

Wang Lai; Zhang Xian-Peng; Xi Guang-Yi; Zhao Wei; Li Hong-Tao; Jiang Yang; Han Yan-Jun; Luo Yi

doi:10.7498/aps.57.5923

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Wang Lai, Zhang Xian-Peng, Xi Guang-Yi, Zhao Wei, Li Hong-Tao, Jiang Yang, Han Yan-Jun, Luo Yi. Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxyJ. Acta Physica Sinica, 2008, 57(9): 5923-5927. DOI: 10.7498/aps.57.5923

Citation:

Wang Lai, Zhang Xian-Peng, Xi Guang-Yi, Zhao Wei, Li Hong-Tao, Jiang Yang, Han Yan-Jun, Luo Yi. Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxyJ. Acta Physica Sinica, 2008, 57(9): 5923-5927. DOI: 10.7498/aps.57.5923

Citation:

Wang Lai, Zhang Xian-Peng, Xi Guang-Yi, Zhao Wei, Li Hong-Tao, Jiang Yang, Han Yan-Jun, Luo Yi. Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxyJ. Acta Physica Sinica, 2008, 57(9): 5923-5927. DOI: 10.7498/aps.57.5923