Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates

Lin Tao; Chen Zhi-Ming; Li Jia; Li Lian-Bi; Li Qing-Min; Pu Hong-Bin

doi:10.7498/aps.57.6007

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Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin. Study of the growth characteristics of SiCGe layers grown on 6H-SiC substratesJ. Acta Physica Sinica, 2008, 57(9): 6007-6012. DOI: 10.7498/aps.57.6007

Citation:

Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin. Study of the growth characteristics of SiCGe layers grown on 6H-SiC substratesJ. Acta Physica Sinica, 2008, 57(9): 6007-6012. DOI: 10.7498/aps.57.6007

Citation:

Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin. Study of the growth characteristics of SiCGe layers grown on 6H-SiC substratesJ. Acta Physica Sinica, 2008, 57(9): 6007-6012. DOI: 10.7498/aps.57.6007