Influence of Ta and TaN bottom electrodes on electrical performances of MIM capacitors with atomic-layer-deposited HfO2 dielectric

Xu Jun; Huang Yu-Jian; Ding Shi-Jin; Zhang Wei

doi:10.7498/aps.58.3433

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Xu Jun, Huang Yu-Jian, Ding Shi-Jin, Zhang Wei. Influence of Ta and TaN bottom electrodes on electrical performances of MIM capacitors with atomic-layer-deposited HfO2 dielectricJ. Acta Physica Sinica, 2009, 58(5): 3433-3436. DOI: 10.7498/aps.58.3433

Citation:

Xu Jun, Huang Yu-Jian, Ding Shi-Jin, Zhang Wei. Influence of Ta and TaN bottom electrodes on electrical performances of MIM capacitors with atomic-layer-deposited HfO2 dielectricJ. Acta Physica Sinica, 2009, 58(5): 3433-3436. DOI: 10.7498/aps.58.3433

Citation:

Xu Jun, Huang Yu-Jian, Ding Shi-Jin, Zhang Wei. Influence of Ta and TaN bottom electrodes on electrical performances of MIM capacitors with atomic-layer-deposited HfO2 dielectricJ. Acta Physica Sinica, 2009, 58(5): 3433-3436. DOI: 10.7498/aps.58.3433