A model considering the ionizing radiation effects in MOS structure

Chen Wei-Hua; Du Lei; Zhuang Yi-Qi; Bao Jun-Lin; He Liang; Zhang Tian-Fu; Zhang Xue

doi:10.7498/aps.58.4090

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Chen Wei-Hua, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Zhang Tian-Fu, Zhang Xue. A model considering the ionizing radiation effects in MOS structureJ. Acta Physica Sinica, 2009, 58(6): 4090-4095. DOI: 10.7498/aps.58.4090

Citation:

Chen Wei-Hua, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Zhang Tian-Fu, Zhang Xue. A model considering the ionizing radiation effects in MOS structureJ. Acta Physica Sinica, 2009, 58(6): 4090-4095. DOI: 10.7498/aps.58.4090

Citation:

Chen Wei-Hua, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Zhang Tian-Fu, Zhang Xue. A model considering the ionizing radiation effects in MOS structureJ. Acta Physica Sinica, 2009, 58(6): 4090-4095. DOI: 10.7498/aps.58.4090