Electrical and optical properties of single As-doped ZnO nanowire field effect transistors

Zhang Jun-Yan; Deng Tian-Song; Shen Xin; Zhu Kong-Tao; Zhang Qi-Feng; Wu Jin-Lei

doi:10.7498/aps.58.4156

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Zhang Jun-Yan, Deng Tian-Song, Shen Xin, Zhu Kong-Tao, Zhang Qi-Feng, Wu Jin-Lei. Electrical and optical properties of single As-doped ZnO nanowire field effect transistorsJ. Acta Physica Sinica, 2009, 58(6): 4156-4161. DOI: 10.7498/aps.58.4156

Citation:

Zhang Jun-Yan, Deng Tian-Song, Shen Xin, Zhu Kong-Tao, Zhang Qi-Feng, Wu Jin-Lei. Electrical and optical properties of single As-doped ZnO nanowire field effect transistorsJ. Acta Physica Sinica, 2009, 58(6): 4156-4161. DOI: 10.7498/aps.58.4156

Citation:

Zhang Jun-Yan, Deng Tian-Song, Shen Xin, Zhu Kong-Tao, Zhang Qi-Feng, Wu Jin-Lei. Electrical and optical properties of single As-doped ZnO nanowire field effect transistorsJ. Acta Physica Sinica, 2009, 58(6): 4156-4161. DOI: 10.7498/aps.58.4156