ESR characteristics of high-quality semi-insulating 4H-SiC crystal prepared by LPCVD

Cheng Ping; Zhang Yu-Ming; Guo Hui; Zhang Yi-Men; Liao Yu-Long

doi:10.7498/aps.58.4214

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Cheng Ping, Zhang Yu-Ming, Guo Hui, Zhang Yi-Men, Liao Yu-Long. ESR characteristics of high-quality semi-insulating 4H-SiC crystal prepared by LPCVDJ. Acta Physica Sinica, 2009, 58(6): 4214-4218. DOI: 10.7498/aps.58.4214

Citation:

Cheng Ping, Zhang Yu-Ming, Guo Hui, Zhang Yi-Men, Liao Yu-Long. ESR characteristics of high-quality semi-insulating 4H-SiC crystal prepared by LPCVDJ. Acta Physica Sinica, 2009, 58(6): 4214-4218. DOI: 10.7498/aps.58.4214

Citation:

Cheng Ping, Zhang Yu-Ming, Guo Hui, Zhang Yi-Men, Liao Yu-Long. ESR characteristics of high-quality semi-insulating 4H-SiC crystal prepared by LPCVDJ. Acta Physica Sinica, 2009, 58(6): 4214-4218. DOI: 10.7498/aps.58.4214