Effect of different effective mass and electric field on the electronic structure in GaN/AlxGa1-xN spherical quantum dot

Wu Hui-Ting; Wang Hai-Long; Jiang Li-Ming

doi:10.7498/aps.58.465

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Wu Hui-Ting, Wang Hai-Long, Jiang Li-Ming. Effect of different effective mass and electric field on the electronic structure in GaN/AlxGa1-xN spherical quantum dotJ. Acta Physica Sinica, 2009, 58(1): 465-470. DOI: 10.7498/aps.58.465

Citation:

Wu Hui-Ting, Wang Hai-Long, Jiang Li-Ming. Effect of different effective mass and electric field on the electronic structure in GaN/AlxGa1-xN spherical quantum dotJ. Acta Physica Sinica, 2009, 58(1): 465-470. DOI: 10.7498/aps.58.465

Citation:

Wu Hui-Ting, Wang Hai-Long, Jiang Li-Ming. Effect of different effective mass and electric field on the electronic structure in GaN/AlxGa1-xN spherical quantum dotJ. Acta Physica Sinica, 2009, 58(1): 465-470. DOI: 10.7498/aps.58.465