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中国物理学会期刊
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Ni Jin-Yu, Hao Yue, Zhang Jin-Cheng, Duan Huan-Tao, Zhang Jin-Feng. Influence of high-temperature AlN interlayer on the electrical properties of AlGaN/GaN heterostructure and HEMTsJ. Acta Physica Sinica, 2009, 58(7): 4925-4930. DOI: 10.7498/aps.58.4925
Citation: Ni Jin-Yu, Hao Yue, Zhang Jin-Cheng, Duan Huan-Tao, Zhang Jin-Feng. Influence of high-temperature AlN interlayer on the electrical properties of AlGaN/GaN heterostructure and HEMTsJ. Acta Physica Sinica, 2009, 58(7): 4925-4930. DOI: 10.7498/aps.58.4925
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Influence of high-temperature AlN interlayer on the electrical properties of AlGaN/GaN heterostructure and HEMTs

Acta Phys. Sin., 2009, 58(7): 4925-4930.
DOI: 10.7498/aps.58.4925
CSTR: 32037.14.aps.58.4925
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