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中国物理学会期刊
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Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming. The threshold voltage of SiC Schottky barrier source/drain MOSFETJ. Acta Physica Sinica, 2009, 58(1): 494-497. DOI: 10.7498/aps.58.494
Citation: Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming. The threshold voltage of SiC Schottky barrier source/drain MOSFETJ. Acta Physica Sinica, 2009, 58(1): 494-497. DOI: 10.7498/aps.58.494
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The threshold voltage of SiC Schottky barrier source/drain MOSFET

Acta Phys. Sin., 2009, 58(1): 494-497.
DOI: 10.7498/aps.58.494
CSTR: 32037.14.aps.58.494
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