Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs

Gu Wen-Ping; Hao Yue; Zhang Jin-Cheng; Wang Chong; Feng Qian; Ma Xiao-Hua

doi:10.7498/aps.58.511

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Gu Wen-Ping, Hao Yue, Zhang Jin-Cheng, Wang Chong, Feng Qian, Ma Xiao-Hua. Degradation under high-field stress and gate stress of AlGaN/GaN HEMTsJ. Acta Physica Sinica, 2009, 58(1): 511-517. DOI: 10.7498/aps.58.511

Citation:

Gu Wen-Ping, Hao Yue, Zhang Jin-Cheng, Wang Chong, Feng Qian, Ma Xiao-Hua. Degradation under high-field stress and gate stress of AlGaN/GaN HEMTsJ. Acta Physica Sinica, 2009, 58(1): 511-517. DOI: 10.7498/aps.58.511

Citation:

Gu Wen-Ping, Hao Yue, Zhang Jin-Cheng, Wang Chong, Feng Qian, Ma Xiao-Hua. Degradation under high-field stress and gate stress of AlGaN/GaN HEMTsJ. Acta Physica Sinica, 2009, 58(1): 511-517. DOI: 10.7498/aps.58.511