Temperature characteristics of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric

Liu Lin-Jie; Yue Yuan-Zheng; Zhang Jin-Cheng; Ma Xiao-Hua; Dong Zuo-Dian; Hao Yue

doi:10.7498/aps.58.536

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Liu Lin-Jie, Yue Yuan-Zheng, Zhang Jin-Cheng, Ma Xiao-Hua, Dong Zuo-Dian, Hao Yue. Temperature characteristics of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectricJ. Acta Physica Sinica, 2009, 58(1): 536-540. DOI: 10.7498/aps.58.536

Citation:

Liu Lin-Jie, Yue Yuan-Zheng, Zhang Jin-Cheng, Ma Xiao-Hua, Dong Zuo-Dian, Hao Yue. Temperature characteristics of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectricJ. Acta Physica Sinica, 2009, 58(1): 536-540. DOI: 10.7498/aps.58.536

Citation:

Liu Lin-Jie, Yue Yuan-Zheng, Zhang Jin-Cheng, Ma Xiao-Hua, Dong Zuo-Dian, Hao Yue. Temperature characteristics of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectricJ. Acta Physica Sinica, 2009, 58(1): 536-540. DOI: 10.7498/aps.58.536