Effects of the thickness of spacing layer and capping layer on the strain distribution and wavelength emission of InAs/GaAs quantum dot

Liu Yu-Min; Yu Zhong-Yuan; Ren Xiao-Min

doi:10.7498/aps.58.66

Search

x

Liu Yu-Min, Yu Zhong-Yuan, Ren Xiao-Min. Effects of the thickness of spacing layer and capping layer on the strain distribution and wavelength emission of InAs/GaAs quantum dotJ. Acta Physica Sinica, 2009, 58(1): 66-72. DOI: 10.7498/aps.58.66

Citation:

Liu Yu-Min, Yu Zhong-Yuan, Ren Xiao-Min. Effects of the thickness of spacing layer and capping layer on the strain distribution and wavelength emission of InAs/GaAs quantum dotJ. Acta Physica Sinica, 2009, 58(1): 66-72. DOI: 10.7498/aps.58.66

Citation:

Liu Yu-Min, Yu Zhong-Yuan, Ren Xiao-Min. Effects of the thickness of spacing layer and capping layer on the strain distribution and wavelength emission of InAs/GaAs quantum dotJ. Acta Physica Sinica, 2009, 58(1): 66-72. DOI: 10.7498/aps.58.66