Influences of deposition rate and oxygen partial pressure on residual stress of HfO2 films

Cen Min; Zhang Yue-Guang; Chen Wei-Lan; Gu Pei-Fu

doi:10.7498/aps.58.7025

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Cen Min, Zhang Yue-Guang, Chen Wei-Lan, Gu Pei-Fu. Influences of deposition rate and oxygen partial pressure on residual stress of HfO2 filmsJ. Acta Physica Sinica, 2009, 58(10): 7025-7029. DOI: 10.7498/aps.58.7025

Citation:

Cen Min, Zhang Yue-Guang, Chen Wei-Lan, Gu Pei-Fu. Influences of deposition rate and oxygen partial pressure on residual stress of HfO2 filmsJ. Acta Physica Sinica, 2009, 58(10): 7025-7029. DOI: 10.7498/aps.58.7025

Citation:

Cen Min, Zhang Yue-Guang, Chen Wei-Lan, Gu Pei-Fu. Influences of deposition rate and oxygen partial pressure on residual stress of HfO2 filmsJ. Acta Physica Sinica, 2009, 58(10): 7025-7029. DOI: 10.7498/aps.58.7025