Effect of  AlGaN intermediate layer on residual stress control and surface morphology  of   GaN grown  on 6H-SiC substrate by metal organic vapour phase epitaxy

Jiang Yang; Luo Yi; Xi Guang-Yi; Wang Lai; Li Hong-Tao; Zhao Wei; Han Yan-Jun

doi:10.7498/aps.58.7282

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Jiang Yang, Luo Yi, Xi Guang-Yi, Wang Lai, Li Hong-Tao, Zhao Wei, Han Yan-Jun. Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxyJ. Acta Physica Sinica, 2009, 58(10): 7282-7287. DOI: 10.7498/aps.58.7282

Citation:

Jiang Yang, Luo Yi, Xi Guang-Yi, Wang Lai, Li Hong-Tao, Zhao Wei, Han Yan-Jun. Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxyJ. Acta Physica Sinica, 2009, 58(10): 7282-7287. DOI: 10.7498/aps.58.7282

Citation:

Jiang Yang, Luo Yi, Xi Guang-Yi, Wang Lai, Li Hong-Tao, Zhao Wei, Han Yan-Jun. Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxyJ. Acta Physica Sinica, 2009, 58(10): 7282-7287. DOI: 10.7498/aps.58.7282