Improved properties of light emitting diode by rough p-GaN grown at lower temperature

Xing Yan-Hui; Han Jun; Deng Jun; Li Jian-Jun; Xu Chen; Shen Guang-Di

doi:10.7498/aps.59.1233

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Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di. Improved properties of light emitting diode by rough p-GaN grown at lower temperatureJ. Acta Physica Sinica, 2010, 59(2): 1233-1236. DOI: 10.7498/aps.59.1233

Citation:

Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di. Improved properties of light emitting diode by rough p-GaN grown at lower temperatureJ. Acta Physica Sinica, 2010, 59(2): 1233-1236. DOI: 10.7498/aps.59.1233

Citation:

Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di. Improved properties of light emitting diode by rough p-GaN grown at lower temperatureJ. Acta Physica Sinica, 2010, 59(2): 1233-1236. DOI: 10.7498/aps.59.1233