Optimization design of high linearity AlxGa1-xN/AlyGa1-yN/GaN high electron mobility transistor

Cheng Zhi-Qun; Zhou Xiao-Peng; Hu Sha; Zhou Wei-Jian; Zhang Sheng

doi:10.7498/aps.59.1252

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Cheng Zhi-Qun, Zhou Xiao-Peng, Hu Sha, Zhou Wei-Jian, Zhang Sheng. Optimization design of high linearity AlxGa1-xN/AlyGa1-yN/GaN high electron mobility transistorJ. Acta Physica Sinica, 2010, 59(2): 1252-1257. DOI: 10.7498/aps.59.1252

Citation:

Cheng Zhi-Qun, Zhou Xiao-Peng, Hu Sha, Zhou Wei-Jian, Zhang Sheng. Optimization design of high linearity AlxGa1-xN/AlyGa1-yN/GaN high electron mobility transistorJ. Acta Physica Sinica, 2010, 59(2): 1252-1257. DOI: 10.7498/aps.59.1252

Citation:

Cheng Zhi-Qun, Zhou Xiao-Peng, Hu Sha, Zhou Wei-Jian, Zhang Sheng. Optimization design of high linearity AlxGa1-xN/AlyGa1-yN/GaN high electron mobility transistorJ. Acta Physica Sinica, 2010, 59(2): 1252-1257. DOI: 10.7498/aps.59.1252