Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodes

Xue Zheng-Qun; Huang Sheng-Rong; Zhang Bao-Ping; Chen Chao

doi:10.7498/aps.59.1268

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Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao. Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodesJ. Acta Physica Sinica, 2010, 59(2): 1268-1274. DOI: 10.7498/aps.59.1268

Citation:

Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao. Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodesJ. Acta Physica Sinica, 2010, 59(2): 1268-1274. DOI: 10.7498/aps.59.1268

Citation:

Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao. Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodesJ. Acta Physica Sinica, 2010, 59(2): 1268-1274. DOI: 10.7498/aps.59.1268