Stability of the intrinsic defects in unintentionally doped 4H-SiC epitaxial layer

Cheng Ping; Zhang Yu-Ming; Zhang Yi-Men; Wang Yue-Hu; Guo Hui

doi:10.7498/aps.59.3542

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Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men, Wang Yue-Hu, Guo Hui. Stability of the intrinsic defects in unintentionally doped 4H-SiC epitaxial layerJ. Acta Physica Sinica, 2010, 59(5): 3542-3546. DOI: 10.7498/aps.59.3542

Citation:

Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men, Wang Yue-Hu, Guo Hui. Stability of the intrinsic defects in unintentionally doped 4H-SiC epitaxial layerJ. Acta Physica Sinica, 2010, 59(5): 3542-3546. DOI: 10.7498/aps.59.3542

Citation:

Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men, Wang Yue-Hu, Guo Hui. Stability of the intrinsic defects in unintentionally doped 4H-SiC epitaxial layerJ. Acta Physica Sinica, 2010, 59(5): 3542-3546. DOI: 10.7498/aps.59.3542