Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layers

Zhu Li-Hong; Cai Jia-Fa; Li Xiao-Ying; Deng Biao; Liu Bao-Lin

doi:10.7498/aps.59.4996

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Zhu Li-Hong, Cai Jia-Fa, Li Xiao-Ying, Deng Biao, Liu Bao-Lin. Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layersJ. Acta Physica Sinica, 2010, 59(7): 4996-5001. DOI: 10.7498/aps.59.4996

Citation:

Zhu Li-Hong, Cai Jia-Fa, Li Xiao-Ying, Deng Biao, Liu Bao-Lin. Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layersJ. Acta Physica Sinica, 2010, 59(7): 4996-5001. DOI: 10.7498/aps.59.4996

Citation:

Zhu Li-Hong, Cai Jia-Fa, Li Xiao-Ying, Deng Biao, Liu Bao-Lin. Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layersJ. Acta Physica Sinica, 2010, 59(7): 4996-5001. DOI: 10.7498/aps.59.4996