Dual-gate-material-based device design for unipolar metal oxide semiconductor-like carbon nanotube field effect transistors

Zhou Hai-Liang; Zhang Min-Xuan; Fang Liang

doi:10.7498/aps.59.5010

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Zhou Hai-Liang, Zhang Min-Xuan, Fang Liang. Dual-gate-material-based device design for unipolar metal oxide semiconductor-like carbon nanotube field effect transistorsJ. Acta Physica Sinica, 2010, 59(7): 5010-5017. DOI: 10.7498/aps.59.5010

Citation:

Zhou Hai-Liang, Zhang Min-Xuan, Fang Liang. Dual-gate-material-based device design for unipolar metal oxide semiconductor-like carbon nanotube field effect transistorsJ. Acta Physica Sinica, 2010, 59(7): 5010-5017. DOI: 10.7498/aps.59.5010

Citation:

Zhou Hai-Liang, Zhang Min-Xuan, Fang Liang. Dual-gate-material-based device design for unipolar metal oxide semiconductor-like carbon nanotube field effect transistorsJ. Acta Physica Sinica, 2010, 59(7): 5010-5017. DOI: 10.7498/aps.59.5010