Analysis and modeling of quasi-saturation effect in high-voltage LDMOS transistors

Wang Lei; Steve Yang

doi:10.7498/aps.59.571

Wang Lei, Steve Yang. Analysis and modeling of quasi-saturation effect in high-voltage LDMOS transistorsJ. Acta Physica Sinica, 2010, 59(1): 571-578. DOI: 10.7498/aps.59.571

Citation:

Wang Lei, Steve Yang. Analysis and modeling of quasi-saturation effect in high-voltage LDMOS transistorsJ. Acta Physica Sinica, 2010, 59(1): 571-578. DOI: 10.7498/aps.59.571

Citation:

Wang Lei, Steve Yang. Analysis and modeling of quasi-saturation effect in high-voltage LDMOS transistorsJ. Acta Physica Sinica, 2010, 59(1): 571-578. DOI: 10.7498/aps.59.571