Epitaxy structure of a 1.5 μm n-p-n InGaAsP-InP transistor laser

Duan Zi-Gang; Huang Xiao-Dong; Zhou Ning; Xu Guang-Hui; Chai Guang-Yue

doi:10.7498/aps.59.6193

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Duan Zi-Gang, Huang Xiao-Dong, Zhou Ning, Xu Guang-Hui, Chai Guang-Yue. Epitaxy structure of a 1.5 μm n-p-n InGaAsP-InP transistor laserJ. Acta Physica Sinica, 2010, 59(9): 6193-6199. DOI: 10.7498/aps.59.6193

Citation:

Duan Zi-Gang, Huang Xiao-Dong, Zhou Ning, Xu Guang-Hui, Chai Guang-Yue. Epitaxy structure of a 1.5 μm n-p-n InGaAsP-InP transistor laserJ. Acta Physica Sinica, 2010, 59(9): 6193-6199. DOI: 10.7498/aps.59.6193

Citation:

Duan Zi-Gang, Huang Xiao-Dong, Zhou Ning, Xu Guang-Hui, Chai Guang-Yue. Epitaxy structure of a 1.5 μm n-p-n InGaAsP-InP transistor laserJ. Acta Physica Sinica, 2010, 59(9): 6193-6199. DOI: 10.7498/aps.59.6193