InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy

Zhang Yan-Hui; Chen Ping-Ping; Li Tian-Xin; Yin Hao

doi:10.7498/aps.59.8026

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Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao. InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxyJ. Acta Physica Sinica, 2010, 59(11): 8026-8030. DOI: 10.7498/aps.59.8026

Citation:

Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao. InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxyJ. Acta Physica Sinica, 2010, 59(11): 8026-8030. DOI: 10.7498/aps.59.8026

Citation:

Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao. InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxyJ. Acta Physica Sinica, 2010, 59(11): 8026-8030. DOI: 10.7498/aps.59.8026