Effect of doping concentration in p+ deep well on charge sharing in 90nm CMOS technology

Liu Fan-Yu; Liu Heng-Zhu; Liu Bi-Wei; Liang Bin; Chen Jian-Jun

doi:10.7498/aps.60.046106

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Liu Fan-Yu, Liu Heng-Zhu, Liu Bi-Wei, Liang Bin, Chen Jian-Jun. Effect of doping concentration in p+ deep well on charge sharing in 90nm CMOS technologyJ. Acta Physica Sinica, 2011, 60(4): 046106. DOI: 10.7498/aps.60.046106

Citation:

Liu Fan-Yu, Liu Heng-Zhu, Liu Bi-Wei, Liang Bin, Chen Jian-Jun. Effect of doping concentration in p+ deep well on charge sharing in 90nm CMOS technologyJ. Acta Physica Sinica, 2011, 60(4): 046106. DOI: 10.7498/aps.60.046106

Citation:

Liu Fan-Yu, Liu Heng-Zhu, Liu Bi-Wei, Liang Bin, Chen Jian-Jun. Effect of doping concentration in p+ deep well on charge sharing in 90nm CMOS technologyJ. Acta Physica Sinica, 2011, 60(4): 046106. DOI: 10.7498/aps.60.046106