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中国物理学会期刊
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Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke. The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistorsJ. Acta Physica Sinica, 2011, 60(4): 047101. DOI: 10.7498/aps.60.047101
Citation: Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke. The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistorsJ. Acta Physica Sinica, 2011, 60(4): 047101. DOI: 10.7498/aps.60.047101
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The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors

Acta Phys. Sin., 2011, 60(4): 047101.
DOI: 10.7498/aps.60.047101
CSTR: 32037.14.aps.60.047101
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