Comparison between gradient-doping and uniform-doping GaN photocathodes

Du Xiao-Qing; Wang Xiao-Hui; Chang Ben-Kang; Qian Yun-Sheng; Gao Pin; Zhang Yi-Jun; Guo Xiang-Yang

doi:10.7498/aps.60.047901

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Du Xiao-Qing, Wang Xiao-Hui, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Zhang Yi-Jun, Guo Xiang-Yang. Comparison between gradient-doping and uniform-doping GaN photocathodesJ. Acta Physica Sinica, 2011, 60(4): 047901. DOI: 10.7498/aps.60.047901

Citation:

Du Xiao-Qing, Wang Xiao-Hui, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Zhang Yi-Jun, Guo Xiang-Yang. Comparison between gradient-doping and uniform-doping GaN photocathodesJ. Acta Physica Sinica, 2011, 60(4): 047901. DOI: 10.7498/aps.60.047901

Citation:

Du Xiao-Qing, Wang Xiao-Hui, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Zhang Yi-Jun, Guo Xiang-Yang. Comparison between gradient-doping and uniform-doping GaN photocathodesJ. Acta Physica Sinica, 2011, 60(4): 047901. DOI: 10.7498/aps.60.047901