Influence of interface traps of p-type metal-oxide-semiconductor field effect transistor on single event charge sharing collection

Chen Jian-Jun; Chen Shu-Ming; Liang Bin; Liu Bi-Wei; Chi Ya-Qing; Qin Jun-Rui; He Yi-Bai

doi:10.7498/aps.60.086107

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Chen Jian-Jun, Chen Shu-Ming, Liang Bin, Liu Bi-Wei, Chi Ya-Qing, Qin Jun-Rui, He Yi-Bai. Influence of interface traps of p-type metal-oxide-semiconductor field effect transistor on single event charge sharing collectionJ. Acta Physica Sinica, 2011, 60(8): 086107. DOI: 10.7498/aps.60.086107

Citation:

Chen Jian-Jun, Chen Shu-Ming, Liang Bin, Liu Bi-Wei, Chi Ya-Qing, Qin Jun-Rui, He Yi-Bai. Influence of interface traps of p-type metal-oxide-semiconductor field effect transistor on single event charge sharing collectionJ. Acta Physica Sinica, 2011, 60(8): 086107. DOI: 10.7498/aps.60.086107

Citation:

Chen Jian-Jun, Chen Shu-Ming, Liang Bin, Liu Bi-Wei, Chi Ya-Qing, Qin Jun-Rui, He Yi-Bai. Influence of interface traps of p-type metal-oxide-semiconductor field effect transistor on single event charge sharing collectionJ. Acta Physica Sinica, 2011, 60(8): 086107. DOI: 10.7498/aps.60.086107