Growth of Ge quantum dot at the mix-crystal interface self-induced on the ion beam sputtering deposition

Xiong Fei; Pan Hong-Xing; Zhang Hui; Yang Yu

doi:10.7498/aps.60.088102

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Xiong Fei, Pan Hong-Xing, Zhang Hui, Yang Yu. Growth of Ge quantum dot at the mix-crystal interface self-induced on the ion beam sputtering depositionJ. Acta Physica Sinica, 2011, 60(8): 088102. DOI: 10.7498/aps.60.088102

Citation:

Xiong Fei, Pan Hong-Xing, Zhang Hui, Yang Yu. Growth of Ge quantum dot at the mix-crystal interface self-induced on the ion beam sputtering depositionJ. Acta Physica Sinica, 2011, 60(8): 088102. DOI: 10.7498/aps.60.088102

Citation:

Xiong Fei, Pan Hong-Xing, Zhang Hui, Yang Yu. Growth of Ge quantum dot at the mix-crystal interface self-induced on the ion beam sputtering depositionJ. Acta Physica Sinica, 2011, 60(8): 088102. DOI: 10.7498/aps.60.088102