Song Kun, Chai Chang-Chun, Yang Yin-Tang, Zhang Xian-Jun, Chen Bin. Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structureJ. Acta Physica Sinica, 2012, 61(2): 027202. DOI: 10.7498/aps.61.027202
|
Citation:
|
Song Kun, Chai Chang-Chun, Yang Yin-Tang, Zhang Xian-Jun, Chen Bin. Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structureJ. Acta Physica Sinica, 2012, 61(2): 027202. DOI: 10.7498/aps.61.027202
|
Song Kun, Chai Chang-Chun, Yang Yin-Tang, Zhang Xian-Jun, Chen Bin. Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structureJ. Acta Physica Sinica, 2012, 61(2): 027202. DOI: 10.7498/aps.61.027202
|
Citation:
|
Song Kun, Chai Chang-Chun, Yang Yin-Tang, Zhang Xian-Jun, Chen Bin. Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structureJ. Acta Physica Sinica, 2012, 61(2): 027202. DOI: 10.7498/aps.61.027202
|
DownLoad: