A analytic model for the threshold-voltage of novel high-speed semiconductor device IMOS

Li Yu-Chen; Zhang He-Ming; Zhang Yu-Ming; Hu Hui-Yong; Xu Xiao-Bo; Qin Shan-Shan; Wang Guan-Yu

doi:10.7498/aps.61.047303

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Li Yu-Chen, Zhang He-Ming, Zhang Yu-Ming, Hu Hui-Yong, Xu Xiao-Bo, Qin Shan-Shan, Wang Guan-Yu. A analytic model for the threshold-voltage of novel high-speed semiconductor device IMOSJ. Acta Physica Sinica, 2012, 61(4): 047303. DOI: 10.7498/aps.61.047303

Citation:

Li Yu-Chen, Zhang He-Ming, Zhang Yu-Ming, Hu Hui-Yong, Xu Xiao-Bo, Qin Shan-Shan, Wang Guan-Yu. A analytic model for the threshold-voltage of novel high-speed semiconductor device IMOSJ. Acta Physica Sinica, 2012, 61(4): 047303. DOI: 10.7498/aps.61.047303

Citation:

Li Yu-Chen, Zhang He-Ming, Zhang Yu-Ming, Hu Hui-Yong, Xu Xiao-Bo, Qin Shan-Shan, Wang Guan-Yu. A analytic model for the threshold-voltage of novel high-speed semiconductor device IMOSJ. Acta Physica Sinica, 2012, 61(4): 047303. DOI: 10.7498/aps.61.047303