Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors

Lü Ling; Zhang Jin-Cheng; Li Liang; Ma Xiao-Hua; Cao Yan-Rong; Hao Yue

doi:10.7498/aps.61.057202

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Lü Ling, Zhang Jin-Cheng, Li Liang, Ma Xiao-Hua, Cao Yan-Rong, Hao Yue. Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistorsJ. Acta Physica Sinica, 2012, 61(5): 057202. DOI: 10.7498/aps.61.057202

Citation:

Lü Ling, Zhang Jin-Cheng, Li Liang, Ma Xiao-Hua, Cao Yan-Rong, Hao Yue. Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistorsJ. Acta Physica Sinica, 2012, 61(5): 057202. DOI: 10.7498/aps.61.057202

Citation:

Lü Ling, Zhang Jin-Cheng, Li Liang, Ma Xiao-Hua, Cao Yan-Rong, Hao Yue. Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistorsJ. Acta Physica Sinica, 2012, 61(5): 057202. DOI: 10.7498/aps.61.057202