Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD

Chen Cheng-Zhao; Zheng Yuan-Yu; Huang Shi-Hao; Li Cheng; Lai Hong-Kai; Chen Song-Yan

doi:10.7498/aps.61.078104

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Chen Cheng-Zhao, Zheng Yuan-Yu, Huang Shi-Hao, Li Cheng, Lai Hong-Kai, Chen Song-Yan. Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVDJ. Acta Physica Sinica, 2012, 61(7): 078104. DOI: 10.7498/aps.61.078104

Citation:

Chen Cheng-Zhao, Zheng Yuan-Yu, Huang Shi-Hao, Li Cheng, Lai Hong-Kai, Chen Song-Yan. Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVDJ. Acta Physica Sinica, 2012, 61(7): 078104. DOI: 10.7498/aps.61.078104

Citation:

Chen Cheng-Zhao, Zheng Yuan-Yu, Huang Shi-Hao, Li Cheng, Lai Hong-Kai, Chen Song-Yan. Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVDJ. Acta Physica Sinica, 2012, 61(7): 078104. DOI: 10.7498/aps.61.078104