Analytical modeling of asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain

Li Cong; Zhuang Yi-Qi; Han Ru; Zhang Li; Bao Jun-Lin

doi:10.7498/aps.61.078504

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Li Cong, Zhuang Yi-Qi, Han Ru, Zhang Li, Bao Jun-Lin. Analytical modeling of asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drainJ. Acta Physica Sinica, 2012, 61(7): 078504. DOI: 10.7498/aps.61.078504

Citation:

Li Cong, Zhuang Yi-Qi, Han Ru, Zhang Li, Bao Jun-Lin. Analytical modeling of asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drainJ. Acta Physica Sinica, 2012, 61(7): 078504. DOI: 10.7498/aps.61.078504

Citation:

Li Cong, Zhuang Yi-Qi, Han Ru, Zhang Li, Bao Jun-Lin. Analytical modeling of asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drainJ. Acta Physica Sinica, 2012, 61(7): 078504. DOI: 10.7498/aps.61.078504