Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gate

Hu Hui-Yong; Lei Shuai; Zhang He-Ming; Song Jian-Jun; Xuan Rong-Xi; Shu Bin; Wang Bin

doi:10.7498/aps.61.107301

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Hu Hui-Yong, Lei Shuai, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin, Wang Bin. Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gateJ. Acta Physica Sinica, 2012, 61(10): 107301. DOI: 10.7498/aps.61.107301

Citation:

Hu Hui-Yong, Lei Shuai, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin, Wang Bin. Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gateJ. Acta Physica Sinica, 2012, 61(10): 107301. DOI: 10.7498/aps.61.107301

Citation:

Hu Hui-Yong, Lei Shuai, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin, Wang Bin. Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gateJ. Acta Physica Sinica, 2012, 61(10): 107301. DOI: 10.7498/aps.61.107301