The model of valence-band dispersion for strained Ge/Si1-xGex

Dai Xian-Ying; Yang Cheng; Song Jian-Jun; Zhang He-Ming; Hao Yue; Zheng Ruo-Chuan

doi:10.7498/aps.61.137104

Search

x

Dai Xian-Ying, Yang Cheng, Song Jian-Jun, Zhang He-Ming, Hao Yue, Zheng Ruo-Chuan. The model of valence-band dispersion for strained Ge/Si1-xGexJ. Acta Physica Sinica, 2012, 61(13): 137104. DOI: 10.7498/aps.61.137104

Citation:

Dai Xian-Ying, Yang Cheng, Song Jian-Jun, Zhang He-Ming, Hao Yue, Zheng Ruo-Chuan. The model of valence-band dispersion for strained Ge/Si1-xGexJ. Acta Physica Sinica, 2012, 61(13): 137104. DOI: 10.7498/aps.61.137104

Citation:

Dai Xian-Ying, Yang Cheng, Song Jian-Jun, Zhang He-Ming, Hao Yue, Zheng Ruo-Chuan. The model of valence-band dispersion for strained Ge/Si1-xGexJ. Acta Physica Sinica, 2012, 61(13): 137104. DOI: 10.7498/aps.61.137104