The effect of ITO annealing on electrical characteristic of GaN based LED

Liu Jian-Peng; Zhu Yan-Xu; Guo Wei-Ling; Yan Wei-Wei; Wu Guo-Qing

doi:10.7498/aps.61.137303

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Liu Jian-Peng, Zhu Yan-Xu, Guo Wei-Ling, Yan Wei-Wei, Wu Guo-Qing. The effect of ITO annealing on electrical characteristic of GaN based LEDJ. Acta Physica Sinica, 2012, 61(13): 137303. DOI: 10.7498/aps.61.137303

Citation:

Liu Jian-Peng, Zhu Yan-Xu, Guo Wei-Ling, Yan Wei-Wei, Wu Guo-Qing. The effect of ITO annealing on electrical characteristic of GaN based LEDJ. Acta Physica Sinica, 2012, 61(13): 137303. DOI: 10.7498/aps.61.137303

Citation:

Liu Jian-Peng, Zhu Yan-Xu, Guo Wei-Ling, Yan Wei-Wei, Wu Guo-Qing. The effect of ITO annealing on electrical characteristic of GaN based LEDJ. Acta Physica Sinica, 2012, 61(13): 137303. DOI: 10.7498/aps.61.137303