Ge and Nb co-doped TiO2 films with narrow band gap and low resistivity prepared by sputtering

Luo Xiao-Dong; Di Guo-Qing

doi:10.7498/aps.61.206803

Luo Xiao-Dong, Di Guo-Qing. Ge and Nb co-doped TiO2 films with narrow band gap and low resistivity prepared by sputteringJ. Acta Physica Sinica, 2012, 61(20): 206803. DOI: 10.7498/aps.61.206803

Citation:

Luo Xiao-Dong, Di Guo-Qing. Ge and Nb co-doped TiO2 films with narrow band gap and low resistivity prepared by sputteringJ. Acta Physica Sinica, 2012, 61(20): 206803. DOI: 10.7498/aps.61.206803

Citation:

Luo Xiao-Dong, Di Guo-Qing. Ge and Nb co-doped TiO2 films with narrow band gap and low resistivity prepared by sputteringJ. Acta Physica Sinica, 2012, 61(20): 206803. DOI: 10.7498/aps.61.206803