Study on high mobility In0.6Ga0.4As channel MOSHEMT and MOSFET

Chang Hu-Dong; Sun Bing; Lu Li; Zhao Wei; Wang Sheng-Kai; Wang Wen-Xin; Liu Hong-Gang

doi:10.7498/aps.61.217304

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Chang Hu-Dong, Sun Bing, Lu Li, Zhao Wei, Wang Sheng-Kai, Wang Wen-Xin, Liu Hong-Gang. Study on high mobility In0.6Ga0.4As channel MOSHEMT and MOSFETJ. Acta Physica Sinica, 2012, 61(21): 217304. DOI: 10.7498/aps.61.217304

Citation:

Chang Hu-Dong, Sun Bing, Lu Li, Zhao Wei, Wang Sheng-Kai, Wang Wen-Xin, Liu Hong-Gang. Study on high mobility In0.6Ga0.4As channel MOSHEMT and MOSFETJ. Acta Physica Sinica, 2012, 61(21): 217304. DOI: 10.7498/aps.61.217304

Citation:

Chang Hu-Dong, Sun Bing, Lu Li, Zhao Wei, Wang Sheng-Kai, Wang Wen-Xin, Liu Hong-Gang. Study on high mobility In0.6Ga0.4As channel MOSHEMT and MOSFETJ. Acta Physica Sinica, 2012, 61(21): 217304. DOI: 10.7498/aps.61.217304