Dependence of the DC stress negative bias temperature instability effect on basic device parameters in pMOSFET

Cao Jian-Min; He Wei; Huang Si-Wen; Zhang Xu-Lin

doi:10.7498/aps.61.217305

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Cao Jian-Min, He Wei, Huang Si-Wen, Zhang Xu-Lin. Dependence of the DC stress negative bias temperature instability effect on basic device parameters in pMOSFETJ. Acta Physica Sinica, 2012, 61(21): 217305. DOI: 10.7498/aps.61.217305

Citation:

Cao Jian-Min, He Wei, Huang Si-Wen, Zhang Xu-Lin. Dependence of the DC stress negative bias temperature instability effect on basic device parameters in pMOSFETJ. Acta Physica Sinica, 2012, 61(21): 217305. DOI: 10.7498/aps.61.217305

Citation:

Cao Jian-Min, He Wei, Huang Si-Wen, Zhang Xu-Lin. Dependence of the DC stress negative bias temperature instability effect on basic device parameters in pMOSFETJ. Acta Physica Sinica, 2012, 61(21): 217305. DOI: 10.7498/aps.61.217305