The total dose irradiation effects of SOI NMOS devices under different bias conditions

Zhuo Qing-Qing; Liu Hong-Xia; Yang Zhao-Nian; Cai Hui-Min; Hao Yue

doi:10.7498/aps.61.220702

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Zhuo Qing-Qing, Liu Hong-Xia, Yang Zhao-Nian, Cai Hui-Min, Hao Yue. The total dose irradiation effects of SOI NMOS devices under different bias conditionsJ. Acta Physica Sinica, 2012, 61(22): 220702. DOI: 10.7498/aps.61.220702

Citation:

Zhuo Qing-Qing, Liu Hong-Xia, Yang Zhao-Nian, Cai Hui-Min, Hao Yue. The total dose irradiation effects of SOI NMOS devices under different bias conditionsJ. Acta Physica Sinica, 2012, 61(22): 220702. DOI: 10.7498/aps.61.220702

Citation:

Zhuo Qing-Qing, Liu Hong-Xia, Yang Zhao-Nian, Cai Hui-Min, Hao Yue. The total dose irradiation effects of SOI NMOS devices under different bias conditionsJ. Acta Physica Sinica, 2012, 61(22): 220702. DOI: 10.7498/aps.61.220702