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中国物理学会期刊
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Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen. Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantationJ. Acta Physica Sinica, 2012, 61(22): 227302. DOI: 10.7498/aps.61.227302
Citation: Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen. Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantationJ. Acta Physica Sinica, 2012, 61(22): 227302. DOI: 10.7498/aps.61.227302
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Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantation

Acta Phys. Sin., 2012, 61(22): 227302.
DOI: 10.7498/aps.61.227302
CSTR: 32037.14.aps.61.227302
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