Progress of the improved mobilities of organic field-effect transistors based on dielectric surface modification

Shi Wei-Wei; Li-Wen; Yi Ming-Dong; Xie Ling-Hai; Wei-Wei; Huang Wei

doi:10.7498/aps.61.228502

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Shi Wei-Wei, Li-Wen, Yi Ming-Dong, Xie Ling-Hai, Wei-Wei, Huang Wei. Progress of the improved mobilities of organic field-effect transistors based on dielectric surface modificationJ. Acta Physica Sinica, 2012, 61(22): 228502. DOI: 10.7498/aps.61.228502

Citation:

Shi Wei-Wei, Li-Wen, Yi Ming-Dong, Xie Ling-Hai, Wei-Wei, Huang Wei. Progress of the improved mobilities of organic field-effect transistors based on dielectric surface modificationJ. Acta Physica Sinica, 2012, 61(22): 228502. DOI: 10.7498/aps.61.228502

Citation:

Shi Wei-Wei, Li-Wen, Yi Ming-Dong, Xie Ling-Hai, Wei-Wei, Huang Wei. Progress of the improved mobilities of organic field-effect transistors based on dielectric surface modificationJ. Acta Physica Sinica, 2012, 61(22): 228502. DOI: 10.7498/aps.61.228502