Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial wafer

Ji Chuan; Xu Jin

doi:10.7498/aps.61.236102

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Ji Chuan, Xu Jin. Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial waferJ. Acta Physica Sinica, 2012, 61(23): 236102. DOI: 10.7498/aps.61.236102

Citation:

Ji Chuan, Xu Jin. Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial waferJ. Acta Physica Sinica, 2012, 61(23): 236102. DOI: 10.7498/aps.61.236102

Citation:

Ji Chuan, Xu Jin. Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial waferJ. Acta Physica Sinica, 2012, 61(23): 236102. DOI: 10.7498/aps.61.236102