Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors

Xi Shan-Bin; Lu Wu; Ren Di-Yuan; Zhou Dong; Wen Lin; Sun Jing; Wu Xue

doi:10.7498/aps.61.236103

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Xi Shan-Bin, Lu Wu, Ren Di-Yuan, Zhou Dong, Wen Lin, Sun Jing, Wu Xue. Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistorsJ. Acta Physica Sinica, 2012, 61(23): 236103. DOI: 10.7498/aps.61.236103

Citation:

Xi Shan-Bin, Lu Wu, Ren Di-Yuan, Zhou Dong, Wen Lin, Sun Jing, Wu Xue. Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistorsJ. Acta Physica Sinica, 2012, 61(23): 236103. DOI: 10.7498/aps.61.236103

Citation:

Xi Shan-Bin, Lu Wu, Ren Di-Yuan, Zhou Dong, Wen Lin, Sun Jing, Wu Xue. Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistorsJ. Acta Physica Sinica, 2012, 61(23): 236103. DOI: 10.7498/aps.61.236103