Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy

Hu Yi-Bin; Hao Zhi-Biao; Hu Jian-Nan; Niu Lang; Wang Lai; Luo Yi

doi:10.7498/aps.61.237804

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Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai, Luo Yi. Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxyJ. Acta Physica Sinica, 2012, 61(23): 237804. DOI: 10.7498/aps.61.237804

Citation:

Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai, Luo Yi. Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxyJ. Acta Physica Sinica, 2012, 61(23): 237804. DOI: 10.7498/aps.61.237804

Citation:

Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai, Luo Yi. Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxyJ. Acta Physica Sinica, 2012, 61(23): 237804. DOI: 10.7498/aps.61.237804