Gate length dependence of SOI NMOS device response to total dose irradiation

Peng Li; Zhuo Qing-Qing; Liu Hong-Xia; Cai Hui-Min

doi:10.7498/aps.61.240703

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Peng Li, Zhuo Qing-Qing, Liu Hong-Xia, Cai Hui-Min. Gate length dependence of SOI NMOS device response to total dose irradiationJ. Acta Physica Sinica, 2012, 61(24): 240703. DOI: 10.7498/aps.61.240703

Citation:

Peng Li, Zhuo Qing-Qing, Liu Hong-Xia, Cai Hui-Min. Gate length dependence of SOI NMOS device response to total dose irradiationJ. Acta Physica Sinica, 2012, 61(24): 240703. DOI: 10.7498/aps.61.240703

Citation:

Peng Li, Zhuo Qing-Qing, Liu Hong-Xia, Cai Hui-Min. Gate length dependence of SOI NMOS device response to total dose irradiationJ. Acta Physica Sinica, 2012, 61(24): 240703. DOI: 10.7498/aps.61.240703