Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rate

Shang Huai-Chao; Liu Hong-Xia; Zhuo Qing-Qing

doi:10.7498/aps.61.246101

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Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing. Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rateJ. Acta Physica Sinica, 2012, 61(24): 246101. DOI: 10.7498/aps.61.246101

Citation:

Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing. Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rateJ. Acta Physica Sinica, 2012, 61(24): 246101. DOI: 10.7498/aps.61.246101

Citation:

Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing. Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rateJ. Acta Physica Sinica, 2012, 61(24): 246101. DOI: 10.7498/aps.61.246101